RESEARCHER PROFILE
Biloliddin M. Ergashev
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Andijan State University
Biloliddin M. Ergashev works in Semiconductor materials and interfaces, Semiconductor materials and devices, Silicon and Solar Cell Technologies, Advancements in Semiconductor Devices and Circuit Design, Fusion materials and technologies. Recorded institutional associations include Andijan State University, Andijon Davlat Pedagogika instituti.
15Publications
6Citations
2H-index
Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.
Selected research works
Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.
Study of the Formation of Low-Dimensional Defect States in Single-Crystal Silicon with the Participation of Oxygen
2025 · 4 citationsЭлектрические и фотоэлектрические свойства эпитаксиальных пленок (GaAs)1-x-y(Ge2)x(ZnSe)y
2020 · 0 citationsВлияние примесных атомов платины на структурные свойства монокристаллического кремния
2025 · 0 citationsThermal evolution of impurity-induced energy levels in platinum-doped silicon
2026 · 0 citationsThe effect of thermal treatment on the absorption spectra of background impurity (oxygen and carbon) atoms in p-Si structures
2026 · 0 citationsINFLUENCE OF LOCAL OXIDE-TRAPPED CHARGE LOCALIZATION ON GATE CAPACITANCES IN SOI FINFETS
2026 · 0 citationsSRIM/TRIM SIMULATION OF REDUCED COBALT-ION IMPLANTATION DEPTH IN PTDOPED SILICON
2026 · 0 citationsAI-assisted modeling of light propagation in layered biological photonic media
2026 · 0 citationsPhotonic smart materials for sustainable energy-efficient building envelopes in hot arid climates
2026 · 0 citationsA comprehensive analysis of energy-efficient water harvesting technologies using optical materials
2026 · 0 citationsStructural and Phase States of Rhodium Doped Silicon Monocrystals
2026 · 0 citationsModeling the Effect of Co-Ion Implantation on ZnO, Mg-Doped ZnO Thin Films Using Monte Carlo SRIM
2026 · 0 citationsDependence of the capacitance of trap states at the oxide–semiconductor interface on the interface trap density in nanoscale silicon-on-insulator FinFET transistors and its effect on electrophysical parameters
2026 · 0 citationsTCAD-Based Capacitance Analysis for Identifying Longitudinally Localized Oxide-Trapped Charge in SOI FinFETS
2026 · 0 citations
