RESEARCHER PROFILE
Jamiyanaa Dashdorj
J
Chatham University
Jamiyanaa Dashdorj works in Semiconductor materials and interfaces, GaN-based semiconductor devices and materials, Silicon Carbide Semiconductor Technologies, Silicon and Solar Cell Technologies, Semiconductor materials and devices. Recorded institutional associations include Chatham University.
43Publications
299Citations
10H-index
Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.
Selected research works
Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.
Analysis of charge separation dynamics in a semiconductor junction
2005 · 95 citationsOptical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals
2014 · 22 citationsInterface recombination velocity measurement by a contactless microwave technique
2004 · 21 citationsIron-related defect levels in SrTiO3 measured by photoelectron paramagnetic resonance spectroscopy
2010 · 21 citationsCharge transfer in semi-insulating Fe-doped GaN
2012 · 17 citationsPassivation and activation of Mg acceptors in heavily doped GaN
2011 · 17 citationsA model for Be-related photo-absorption in compensated GaN:Be substrates
2016 · 15 citationsIncorporation of Mg in Free-Standing HVPE GaN Substrates
2016 · 14 citationsMeasurements of optical cross sections of the carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance
2008 · 12 citationsAccurate gaseous ion mobility measurements
2017 · 10 citationsMg-hydrogen interaction in AlGaN alloys
2012 · 9 citationsLarge Persistent Photoconductivity in Strontium Titanate at Room Temperature
2015 · 8 citationsEffect of local fields on the Mg acceptor in GaN films and GaN substrates
2016 · 7 citationsDetermination of mobility and diffusion coefficients of Ar+ and Ar2+ ions in argon gas
2020 · 7 citationsDetermination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method
2015 · 5 citationsRelationship of recombination lifetime to dark current in silicon p-n junctions
2005 · 3 citationsMotion of NO + ions in uniform electrostatic fields in the rare gases
2021 · 3 citationsRecombination Lifetimes Using the RCPCD Technique: Comparison with Other Methods
2005 · 2 citationsObservation of Retarded Recombination in ChargeSeparation Structures
2003 · 2 citationsInterface recombination velocity measurement by a contactless microwave technique
2004 · 2 citationsModeling of recombination lifetimes in charge-separation device structures
2003 · 2 citationsIntrinsic Surface Defects on 4H SiC Substrates
2010 · 2 citationsStudy of Chromium Impurities in SrTiO3 by Photo-Electron Paramagnetic Resonance Spectroscopy
2007 · 1 citationsThird-order transport coefficients of ion swarms
2021 · 1 citationsCharaketrystyka właściwości fizykochemicznych proszków węglowych pod kątem ich zastosowania w przemyśle farmaceutyczno-kosmetycznym
2010 · 1 citations