RESEARCHER PROFILE

U.H. Liaw

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U

China University of Science and Technology

Semiconductor materials and interfacesSemiconductor materials and devicesGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesAdvanced Semiconductor Detectors and Materials

U.H. Liaw works in Semiconductor materials and interfaces, Semiconductor materials and devices, GaN-based semiconductor devices and materials, Silicon Carbide Semiconductor Technologies, Advanced Semiconductor Detectors and Materials. Recorded institutional associations include China University of Science and Technology.

25Publications
562Citations
9H-index

Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.

Selected research works

Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.

  1. InGaN-GaN multiquantum-well blue and green light-emitting diodes

    2002 · 252 citations

  2. Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts

    2002 · 90 citations

  3. Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films

    2002 · 43 citations

  4. InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering

    2003 · 41 citations

  5. ZnSTeSe metal-semiconductor-metal photodetectors

    2002 · 24 citations

  6. AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer

    2003 · 19 citations

  7. High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing

    2003 · 16 citations

  8. ZnO epitaxial layers grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer

    2007 · 12 citations

  9. ZnCdSeTe-based orange light-emitting diode

    2002 · 11 citations

  10. Be diffusion in GaN

    2002 · 9 citations

  11. Effects of thermal annealing on In-induced metastable defects in InGaN films

    2007 · 6 citations

  12. Improvement of electrical and reliability properties of tantalum pentoxide by high-density plasma (HDP) annealing in N2O

    2002 · 6 citations

  13. Ion-implantation technology for improved GaAs MESFETs performance

    2003 · 5 citations

  14. Origins of 1/f noise in indium antimonide photodiodes

    1997 · 5 citations

  15. 1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors

    1999 · 5 citations

  16. Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition

    1994 · 5 citations

  17. AlGaN/GaN heterostructure grown on 1∘ -tilt sapphire substrate by MOCVD

    2007 · 4 citations

  18. Effects of Interfacial Oxide Layer for the Ta2O5Capacitor After High-Temperature Annealing

    2002 · 3 citations

  19. ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes

    2002 · 3 citations

  20. Effects of photoassisted O2 annealing on the properties of (Ba,Sr)TiO3 thin films

    2002 · 2 citations

  21. Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

    2004 · 1 citations

  22. Al[sub 0.22]Ga[sub 0.78]N∕GaN HFETs Prepared on Vicinal-Cut Sapphire Substrates

    2007 · 0 citations

  23. ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy

    2002 · 0 citations

  24. Influence of Process Flow on the Characteristics of Strained-Si nMOSFETs

    2007 · 0 citations

  25. ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors

    2002 · 0 citations

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