RESEARCHER PROFILE

В. И. Алтухов

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В

North-Caucasus Federal University

Silicon Carbide Semiconductor TechnologiesSemiconductor materials and interfacesSolid-state spectroscopy and crystallographyThermal properties of materialsGaN-based semiconductor devices and materials

В. И. Алтухов works in Silicon Carbide Semiconductor Technologies, Semiconductor materials and interfaces, Solid-state spectroscopy and crystallography, Thermal properties of materials, GaN-based semiconductor devices and materials. Recorded institutional associations include North-Caucasus Federal University.

43Publications
87Citations
6H-index

Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.

Selected research works

Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.

  1. Light scattering in LiH crystals with LO phonon emission

    1985 · 21 citations
  2. Theory of Lattice Thermal Conductivity of Anharmonic Crystals with Impurities. (II). Interference Effects

    1974 · 14 citations
  3. Low‐Temperature Heat Conduction of γ‐Irradiated MgO Crystals

    1981 · 13 citations
  4. Theory of Lattice Thermal Conductivity of Anharmonic Crystals with Impurities

    1974 · 9 citations
  5. Transport Relaxation Time for Phonon‐Impurity Scattering

    1972 · 8 citations
  6. Quasi‐Elastic Scattering of Phonons and Thermal Conductivity of Crystals Presenting a Structural Phase Transition

    1979 · 6 citations
  7. Phonon scattering on small‐radius colloids in KCl crystals

    1978 · 5 citations
  8. Thermal Conductivity and Optical and Paramagnetic Absorption Spectra of Reactor Irradiated MgO Crystals

    1984 · 4 citations
  9. Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model

    2018 · 4 citations
  10. Resonance phonon scattering on stable F 2 + centers in LiF crystals irradiated in the stressed state

    1985 · 1 citations
  11. Study of phonon scattering processes in displacive ferroelectrics by means of heat conductivity measurements

    1994 · 1 citations
  12. Расчет высоты барьера шоттки на контакте металла с полупроводниковым твердым раствором (SiC)1 –x(AlN)x

    2015 · 1 citations
  13. РАСЧЕТ АНОМАЛЬНОГО ПОВЕДЕНИЯ КОЭФФИЦИЕНТОВ ТЕПЛОПРОВОДНОСТИ И ТЕПЛОВОГО РАСШИРЕНИЯ СЕГНЕТОКЕРАМИКИ НА ОСНОВЕ ТВЕРДЫХ РАСТВОРОВ ЦИРКОНАТА-ТИТАНАТА СВИНЦА

    2014 · 0 citations
  14. The critical phonon scattering and peculiarities of the transport phenomena in ferroelectric crystal

    2002 · 0 citations
  15. Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x (AlN) x semiconductor solid solution

    2015 · 0 citations
  16. Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SіC)1 – x(AlN)x

    2016 · 0 citations
  17. Нелинейная по концентрации поверхностных состояний модель барьера Шоттки и расчет вольт-амперных характеристик диодов на основе SiC и его твердых растворов в составной модели токопереноса

    2018 · 0 citations
  18. РАСЧЕТ ВЫСОТЫ БАРЬЕРА ШОТТКИ НА КОНТАКТЕ МЕТАЛЛА С ПОЛУПРОВОДНИКОВЫМ ТВЕРДЫМ РАСТВОРОМ (SIC)1 - X(ALN)X

    2015 · 0 citations
  19. Production of Single Crystals, Films and Characteristics of Schottky Diodes Based on 4H-SIC and its Solid Solutions

    2019 · 0 citations
  20. Calculation and analysis of the features temperature behavior of the electrical conductivity semiconductors GeTe and SnTe near structural phase transition TC

    2019 · 0 citations
  21. Schotky Barrier Height and Calculation of Voltage–Current Characteristics of Al/n-(SiC)1–x(AlN)x Diodes And 4H–SiC Heterojunctions

    2020 · 0 citations
  22. Schottky barrier height value and calculation of voltage-current characteristics Al/n-(SiC)1-x(AlN)x diodes and geterotransition, based on 4H-SiC

    2019 · 0 citations
  23. Discharge-pumped high pulse eximer laser

    1983 · 0 citations
  24. Obtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes

    2020 · 0 citations
  25. A discharge-pumped repetitively pulsed excimer laser

    1983 · 0 citations

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