RESEARCHER PROFILE

V.V. Buniatyan

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V

National Polytechnic University of Armenia

Ferroelectric and Piezoelectric MaterialsSemiconductor materials and interfacesAnalytical Chemistry and SensorsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices

V.V. Buniatyan works in Ferroelectric and Piezoelectric Materials, Semiconductor materials and interfaces, Analytical Chemistry and Sensors, Silicon Carbide Semiconductor Technologies, Semiconductor materials and devices. Recorded institutional associations include National Polytechnic University of Armenia.

55Publications
262Citations
8H-index

ORCID

Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.

Selected research works

Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.

  1. Wide gap semiconductor microwave devices

    2007 · 83 citations

  2. Capacitively coupled electrolyte-conductivity sensor based on high-k material of barium strontium titanate

    2014 · 34 citations

  3. AREAL low energy electron beam applications in life and materials sciences

    2016 · 27 citations

  4. Towards addressability of light-addressable potentiometric sensors: Shunting effect of non-illuminated region and cross-talk

    2017 · 21 citations

  5. pH‐sensitive properties of barium strontium titanate (BST) thin films prepared by pulsed laser deposition technique

    2010 · 15 citations

  6. Microwave characteristics of BARITT diodes based on silicon carbide

    1999 · 11 citations

  7. Multiparameter Sensor Chip with Barium Strontium Titanate as Multipurpose Material

    2014 · 10 citations

  8. An Array of On-Chip Integrated, Individually Addressable Capacitive Field-Effect Sensors with Control Gate: Design and Modelling

    2021 · 9 citations

  9. Chemical Sensors Based on a High-k Perovskite Oxide of Barium Strontium Titanate

    2014 · 7 citations

  10. Microwave characteristics of BARITT diodes based on silicon carbide

    1999 · 6 citations

  11. Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels

    2001 · 5 citations

  12. Silicon carbide TUNNETT diodes

    2004 · 5 citations

  13. A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

    2006 · 5 citations

  14. Multi‐parameter sensing using high‐k oxide of barium strontium titanate

    2015 · 3 citations

  15. The influence of capture of the injected current carriers on the characteristics of baritt diodes

    1977 · 3 citations

  16. Urea Detection in Phosphate Buffer and Artificial Urine: A Simplified Kinetic Model of a pH-Sensitive EISCAP Urea Biosensor

    2025 · 3 citations

  17. Small-signal analysis of quantum-well BARITT diodes based on silicon carbide

    2001 · 2 citations

  18. BARITT diodes with quantum wells

    1999 · 2 citations

  19. Dielectric characteristics of Pt/BaxSr1-xTiO3/ Pt thin film structure under the electron beam irradiation

    2016 · 2 citations

  20. P3.1 - Capacitive field-effect pH sensor based on an electrolyte-ferroelectric-insulatorsemiconductor structure

    2009 · 2 citations

  21. Current State of Biomedical Engineering Education in Armenia and Perspectives of Development with TEMPUS IV BME-ENA Project

    2014 · 1 citations

  22. The noise characteristics of baritt diodes with traps

    1979 · 1 citations

  23. Characteristics of metal-silicon carbide tunnel contact

    2006 · 1 citations

  24. BaxSr1-x TiO3/pc-Si HETEROJUNCTION

    2013 · 1 citations

  25. Microwave characteristics of hetero-junction impatt diodes based on SiC

    2006 · 1 citations

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