RESEARCHER PROFILE
Fedor A. Ptashchenko
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National University «Odesa Maritime Academy»
Fedor A. Ptashchenko works in Semiconductor materials and interfaces, Silicon and Solar Cell Technologies, Silicon Nanostructures and Photoluminescence, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices. Recorded institutional associations include National University «Odesa Maritime Academy».
31Publications
48Citations
4H-index
Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.
Selected research works
Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.
Electrochemical etching of porous silicon – DFT modeling
2021 · 15 citationsPolarization of the spontaneous radiation of stressed laser heterostructures
1994 · 7 citationsFormation of Acceptor States on the Silicon Hydroxylated Surface Upon NO2 Molecules Adsorption
2017 · 7 citationsConductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations
2017 · 4 citationsLong‐Range Interaction Between NO2 Molecules, Impurity Boron Atoms and Si Atoms with Dangling Bonds in Porous Silicon
2018 · 3 citations“Excess” polarization of the spontaneous emission in laser heterostructures
1996 · 2 citationsAppearance of Additional Electronic Conductivity Silicon Structures in the Atmosphere of Wet Ammonia: ab Initio Calculations
2016 · 2 citationsMechanisms of Changing the Conductivity of Porous Silicon in an Ammonia Atmosphere – DFT Modeling
2020 · 2 citationsEffect of Local Nonradiative Recombination on Time-Resolved Electroluminescence of p–n Junctions
1997 · 1 citationsTunnel surface recombination in optoelectronic device modeling
1997 · 1 citationsLong-range Interaction between Impurity Boron Atoms and Surface Broken Bonds in Porous Silicon: DFT Calculations
2018 · 1 citationsEffect of Long-Range Passivation of Impurity Atoms by Surface Dangling Bonds on the Conductivity of Porous Silicon
2019 · 1 citationsDFT-modeling of Ammonia Molecules Protonation on a p-type Silicon Surface
2019 · 1 citationsEnergy Parameters of the Simplest Chemical Reactions Occurring at the First Stages of Silicon Electrochemical Etching – DFT-Modeling
2023 · 1 citationsAstigmatism of the radiation of semiconductor stripe-geometry lasers
2000 · 0 citationsElectroluminescence kinetics ofp-n-transitions with leakages
1998 · 0 citationsMechanical strain and degradation of laser heterostructures
2001 · 0 citationsTUNNEL SURFACE CURRENT IN GaAs-AlGaAs P-N JUNCTIONS, DUE TO AMMONIA MOLECULES ADSORPTION
2009 · 0 citationsMechanism of the Ammonia Molecules Protonation on the Naturally Oxidized Silicon Surface
2015 · 0 citationsEFFECT OF SURFACE DOPING ON THE CHARACTERISTICS OF GaAs P-N JUNCTIONS AS GAS SENSORS
2013 · 0 citationsLong-range Interaction between pb-centers andNO2 Molecules Adsorbed on the Silicon Suface
2018 · 0 citationsEffect of the Doping Level on the Gas Sensitivity of Si p-n Junctions
2018 · 0 citationsDetermination of electric current threshold parameters for high-frequency electric welding of the retina in experiment and based on two-dimensional numerical simulation depending on the intraocular contents (vitreous, perftordekalin, air)
2013 · 0 citationsLong-range Passivation of Phosphorus Impurity Atoms by Pb-centers and the Emergence of Barriers for Electrons in n-type Porous Silicon
2018 · 0 citationsThe influence of ammonia vapors on the surface current in p–n junctions on III–V semiconductors
2003 · 0 citations