R. Kudrawiec
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Wrocław University of Science and Technology
R. Kudrawiec works in Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, solar cell performance optimization, Semiconductor materials and interfaces, 2D Materials and Applications. Recorded institutional associations include Wrocław University of Science and Technology, Łukasiewicz Research Network – PORT Polish Center for Technology Development.
Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.
Selected research works
Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.
Revealing the nature of photoluminescence emission in the metal-halide double perovskite Cs 2 AgBiBr 6
2019 · 227 citationsThe electronic band structure of Ge 1− x Sn x in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect
2017 · 115 citationsCombined Temperature and Pressure Sensing Using Luminescent NaBiF4:Yb,Er Nanoparticles
2020 · 112 citationsFirst-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data
2015 · 98 citationsBand gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance
2018 · 97 citationsRecent Progress on 1.55-$\mu{\hbox {m}}$ Dilute-Nitride Lasers
2007 · 90 citationsRecent achievements in AMMONO-bulk method
2010 · 87 citationsAmmonothermal GaN substrates: Growth accomplishments and applications
2011 · 86 citationsHigh Bi content GaSbBi alloys
2014 · 80 citationsElectronic Band Structure of GaNxPyAs1−x−y Highly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells
2014 · 78 citationsPressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions
2016 · 71 citationsPressure-Driven Phase Transition in Two-Dimensional Perovskite MHy2PbBr4
2022 · 69 citationsBandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
2020 · 65 citationsExperimental and theoretical studies of native deep-level defects in transition metal dichalcogenides
2022 · 64 citationsDevelopment of GaInNAsSb alloys: Growth, band structure, optical properties and applications
2007 · 63 citationsExplanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells
2003 · 62 citationsPhotoacoustic and modulated reflectance studies of indirect and direct band gap in van der Waals crystals
2017 · 62 citationsMaterial gain engineering in GeSn/Ge quantum wells integrated with an Si platform
2016 · 61 citationsDirect optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2
2016 · 60 citationsExperimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells
2014 · 59 citationsNonpolar GaN substrates grown by ammonothermal method
2009 · 59 citationsCarrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence
2009 · 59 citationsPhotoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
2004 · 58 citationsPhotoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations
2009 · 58 citationsPhotoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN 0.02 As 0.98 , Ga 0.95 In 0.05 N 0.02 As 0.98 , and GaN 0.02 As 0.90 Sb 0.08 layers
2013 · 57 citations