RESEARCHER PROFILE
G. Simin
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G
University of South Carolina
G. Simin works in GaN-based semiconductor devices and materials, Silicon Carbide Semiconductor Technologies, Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and devices, Semiconductor Quantum Structures and Devices. Recorded institutional associations include University of South Carolina.
309Publications
9,623Citations
55H-index
Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.
Selected research works
Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.
An assessment of wide bandgap semiconductors for power devices
2003 · 610 citationsNonresonant detection of terahertz radiation in field effect transistors
2002 · 401 citationsAlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
2000 · 357 citationsCarrier mobility model for GaN
2003 · 272 citationsSi 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors
2001 · 255 citationsAlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
2002 · 228 citationsCrack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
2002 · 200 citationsEnhancement mode AlGaN/GaN HFET with selectivelygrown pn junction gate
2000 · 188 citationsThe 1.6-kV AlGaN/GaN HFETs
2006 · 174 citationsMilliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
2002 · 168 citationsTwo mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
2002 · 166 citationsLattice and energy band engineering in AlInGaN/GaN heterostructures
2000 · 160 citationsHigh electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
2000 · 133 citationsInduced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors
2001 · 122 citationsSelective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates
2000 · 121 citationsAlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor
2001 · 121 citationsField-Plate Engineering for HFETs
2005 · 121 citationsNew Developments in Gallium Nitride and the Impact on Power Electronics
2006 · 118 citationsSiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs
2002 · 113 citationsPolarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells
2002 · 110 citationsNear-band-edge photoluminescence of wurtzite-type AlN
2002 · 107 citationsSiO 2 -passivated lateral-geometry GaN transparent Schottky-barrier detectors
2000 · 107 citationsGaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
2000 · 103 citations7.5 kW/mm 2 current switch using AlGaN/GaNmetal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
2000 · 101 citationsThermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill
2003 · 99 citations