RESEARCHER PROFILE
Ignacio Martin‐Bragado
← Back to Universidad Católica de Murcia
I
Universidad Católica de Murcia
Ignacio Martin‐Bragado works in Semiconductor materials and interfaces, Semiconductor materials and devices, Fusion materials and technologies, Advancements in Semiconductor Devices and Circuit Design, Nuclear materials and radiation effects. Recorded institutional associations include Universidad Católica de Murcia.
109Publications
1,456Citations
21H-index
Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.
Selected research works
Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.
MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion
2013 · 136 citationsInfluence of grain boundaries on the radiation-induced defects and hydrogen in nanostructured and coarse-grained tungsten
2016 · 93 citationsCarbon in silicon: Modeling of diffusion and clustering mechanisms
2002 · 84 citationsKinetic Monte Carlo simulation for semiconductor processing: A review
2017 · 63 citationsTemperature dependence of underdense nanostructure formation in tungsten under helium irradiation
2017 · 59 citationsThe influence of high grain boundary density on helium retention in tungsten
2014 · 54 citationsFacet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model
2009 · 43 citationsGroup 16 elements control the synthesis of continuous fibers of carbon nanotubes
2016 · 43 citationsModeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
2005 · 35 citationsEvolution of dislocation loops in iron under irradiation: The impact of carbon
2014 · 32 citationsPhysical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
2005 · 30 citationsExperimental and computational studies of the influence of grain boundaries and temperature on the radiation-induced damage and hydrogen behavior in tungsten
2019 · 29 citationsIon-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
2005 · 28 citationsAtomistic Monte Carlo simulations of three-dimensional polycrystalline thin films
2003 · 26 citationsAn atomistically informed kinetic Monte Carlo model of grain boundary motion coupled to shear deformation
2014 · 24 citationsModeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
2006 · 23 citationsModeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation
2014 · 22 citationsEffect of ion flux on helium retention in helium-irradiated tungsten
2012 · 22 citationsInsights from atomistic models on loop nucleation and growth in α-Fe thin films under Fe+ 100 keV irradiation
2019 · 22 citationsAtomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication
2001 · 21 citationsDirect observation of hydrogen permeation through grain boundaries in tungsten
2022 · 21 citationsQuasi-atomistic modeling of the microstructure evolution in binary alloys and its application to the FeCr case
2015 · 21 citationsUnderstanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology
2012 · 20 citationsMobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena
2003 · 19 citationsModeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon
2011 · 18 citations
