RESEARCHER PROFILE

Ignacio Martin‐Bragado

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I

Universidad Católica de Murcia

Semiconductor materials and interfacesSemiconductor materials and devicesFusion materials and technologiesAdvancements in Semiconductor Devices and Circuit DesignNuclear materials and radiation effects

Ignacio Martin‐Bragado works in Semiconductor materials and interfaces, Semiconductor materials and devices, Fusion materials and technologies, Advancements in Semiconductor Devices and Circuit Design, Nuclear materials and radiation effects. Recorded institutional associations include Universidad Católica de Murcia.

109Publications
1,456Citations
21H-index

Inclusion identifies researchers whose recorded research contributions may inform their university’s understanding of its research community. It does not rank individual research quality or establish current employment.

Selected research works

Up to 100 highly cited works; DOI links open the original research. Counts reflect the collected record, not real-time citation totals.

  1. MMonCa: An Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion

    2013 · 136 citations
  2. Influence of grain boundaries on the radiation-induced defects and hydrogen in nanostructured and coarse-grained tungsten

    2016 · 93 citations
  3. Carbon in silicon: Modeling of diffusion and clustering mechanisms

    2002 · 84 citations
  4. Kinetic Monte Carlo simulation for semiconductor processing: A review

    2017 · 63 citations
  5. Temperature dependence of underdense nanostructure formation in tungsten under helium irradiation

    2017 · 59 citations
  6. The influence of high grain boundary density on helium retention in tungsten

    2014 · 54 citations
  7. Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model

    2009 · 43 citations
  8. Group 16 elements control the synthesis of continuous fibers of carbon nanotubes

    2016 · 43 citations
  9. Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

    2005 · 35 citations
  10. Evolution of dislocation loops in iron under irradiation: The impact of carbon

    2014 · 32 citations
  11. Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

    2005 · 30 citations
  12. Experimental and computational studies of the influence of grain boundaries and temperature on the radiation-induced damage and hydrogen behavior in tungsten

    2019 · 29 citations
  13. Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

    2005 · 28 citations
  14. Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

    2003 · 26 citations
  15. An atomistically informed kinetic Monte Carlo model of grain boundary motion coupled to shear deformation

    2014 · 24 citations
  16. Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

    2006 · 23 citations
  17. Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

    2014 · 22 citations
  18. Effect of ion flux on helium retention in helium-irradiated tungsten

    2012 · 22 citations
  19. Insights from atomistic models on loop nucleation and growth in α-Fe thin films under Fe+ 100 keV irradiation

    2019 · 22 citations
  20. Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication

    2001 · 21 citations
  21. Direct observation of hydrogen permeation through grain boundaries in tungsten

    2022 · 21 citations
  22. Quasi-atomistic modeling of the microstructure evolution in binary alloys and its application to the FeCr case

    2015 · 21 citations
  23. Understanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology

    2012 · 20 citations
  24. Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

    2003 · 19 citations
  25. Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon

    2011 · 18 citations

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